教えていただきたいです……(>_<;)

例文1 They will take advantage of the nationwide network of twenty-four thousand post offices. (日本語訳) 例文2 Japan's GDP fell zero points six percent in real terms from the previous year. (日本語訳) 例文3 Japan Post Holdings Co.has three hundred thirty- eight trillion yen in assets. (日本語訳) 例文4 The Bank of Japan spent twenty billion yen、 or one hundred ninety-two dollars to establish a new bank. (日本語訳) 例文5 The government injected eight-point six trillion yen in public funds into major banks. (日本語訳)

なんでhaveじゃなくてhasなんですか?(1)

学校生活の中で印象深かっ ごとの紹介記事を書いてみ

教えてください😭 お願いします🙏

) bad but is good for your health. _1 takes 2 needs 3 smells 4 eats Hom beganto wear( 。 )whenhewastenyearsold. 。 1 actions 2 cups 3 glasses 4 goods 16Ye all animals but dogsareher( 。 ).Nowshewantsio | 2 5ecdon 3positon 4secret 有4 Temt( 。)3myhing Sam says Heisahvaystelling mc lies | 厄 Oh iwas justthinking the same thing. e 2 understand 3 speak 4 practice I( )mydiceonap? skeep it on your dcsk. d 3caught 4 jet

ここの訳し方が分からないので教えてください！

EXERCISES 2 | 日本語に直しなさい。 (0) That player igimoheEtaaihanian amateu (⑫ Hs factory is no bigger than a sagar cube (3 He doesnit have many sheep, but probably no fewer than five or six. (4) You must submit it to the ofiice by fax or e-mail no later than July 6. (⑤) T knew my chances of success were mo better than being appointed head of NASA but T tried 2] 多力ににカ康

象形文字、指示文字、会意文字、形声文字とは、何ですか?

計の4 7 KS 問押地 人N掲宮地 深賜羽地 (M 00) 。 (8) 。 ⑯ (⑭ (⑳⑩ ) ) ) ) ) ) ) ) IE ロ@ハ写@要公富2 1つつざ得p/nJU 1@ W幼じへNe ロ@ DRや5 H⑯NANSマn H@朋PDNG コ⑳ンロスてww坦2 園 と 人@ 豆人るっ選っ HATHDぬAE ロ人9 朋じトJH6NG コロBN6

中3の英語です。 否定疑問の問題なのですが、⑶がなぜdon’t you になるのか分かりません。 分かる方教えてくださいm(_ _)m

巴ノ次の美玉が 1…ですねc」 と相手に同意を期待する言い方にたるよう oure on the basketball team, の/そ/ ゲ MM he is a great player, /Y7 7 7 You Hive near the station, 2///- の 2 4 7 yみ

高1英語 答えはbです。 “前から知ってる”からdだと思いました。解説お願いします🙏

ai、 1 やremあー @ How did you come( )the baseball player? a. knowing b. to know e. having known d.to have known

この問題でなんでbyじゃなくてtoを使うんですか？？ 教えてください🙏🙏

21 (1 災の目本文に合うように、( ) 内の語を並べかえなさい ) その野球選手は多くの子供達に知られています。 (knoWn, baseball, We, j%, children, plAyer, to, many).

あってますか？また、空欄のところを教えてください。

誠人 2 [ ]内の動詞を適切な形にして, 英文を完成させなさいゃ いww he new sirt for only 50 minutes when he spied jutee on DOcmn 5時0のーー never 2ヒ(ed 。 pecovowe cetotioweexaoikND ②) Shingo S for an hour when it began to raimn ③) The players sar ンー in Japan for tyo years tomorroW. てsy ②⑦ cathy -首崩』 2 県交A三9 謝)

RHEED法の原理と得られる7つの情報が、この英文に書かれているみたいなのですが、よく分かりません。 分かる方助けてください！🙇‍♂️

INTRODUCTION Reection high-energy electron diHiraction (RHEED) uses a Rnely collimated electron beam with energy of 10-100 keV. The beam irradiates a sample surface with gazing incidence to obtain forward scattered difraction patterms. RHEED enables us to analyze structures of crystal surfaces at atomic levels and also to in situ monitor growth processes of thin films (mo、1988: Ichimiya and Cohen、2004: Peng et al.. 2011). From the arrangement。intensity and profile of the dilraction spots in RHEED patterns as described below in detail、 one can obtain various kinds of information: (1) the periodicity (unit cells) in atomic arrangements. (2) flat- ness of surfaces. (3) sizes of grains/domains of surface structures and microcrystals grown on the surface. (3) epitaxial relation between the grown flms/islands with respect to the substrate. (5) parameters character- izing structural phase transitions. (6) individual atomic positions in the unit cells. and (7) growth styles of thin films and numbers of atomic layers grown. The most important advantages of the method are that it is quite easy to install the RHEED apparatus in Yarious types of vacuum chambers without interfering with other components of apparatuses and to do real- time monitoring during thin-Rlm growths. Because of these advantages.RHEED is nowwidelyusednotonlyin research Iabs of surfaces and thin fims. but also in device production processes in industry Low-energy electron diiraction (LEED、see article Low-ENNERcy ErecroN DirscmoN)。 in which an electron beam of 10-100 eV in energy is irradiated onto a sample surface with nearly normal incidence to obtain back- scattered difraction patterns. is also widely used to analyze the atomic structures of crystal surfaces. Since one has to make the sample face directly to the LEED