ページ3:

Switches
Lamp 1
SW
O
Toggle switch
Rocker switch
Push-butos switches
PC board mounted push-button switches
(a) SPST
(b) SPDT
(c) DPST
(d) DPDT
(e) NOPB
(D) NCPB
(g) Single-pole rotary
Rotary whe
DIP switches forming on PC bonds
Protective devices:
(a) Cartridges
~
the Plug fuse
(c) Circum breakers
id Fose symbol
Clecsit breaker
Wires:
Resistance R
R-
Cross-sectional area, A
L
cross
-sectional
area
A = (CM circular mil (mils)")
-0.001 in.
1 mil = 0.001 inch
A=1CM
Ground:
当参考点(reference point)
⇒ 0 V
+ b
(ex)
+12 V
(a)
(b)
(c)
OV
Measurements
Ammeter (series)
Voltmeter
(parallel I)
(out of circuit)
四、
Ohmmeter
Energy Power
Ohm's law :
.
Energy
V = IR
.
Power:
P = W
(Watt -
Joule
ex
W = (0.25 W) (4hr) = 1.00 & wh
E Kilowatt-hour (kWh)
P=IV=IR
=
R
Power Rating of resistor:(功率額定)
:
physical composition
size.
shape
ohmic value (x)
(0)
(0)
(0)
diameter = 0.005 inch = 5 mils.
A = d` = (5 mils) = 25 CM

ページ4:

Power
Energy
conversion
energy
rating
―>>
Voltage drop
heat
e:number(不变)、
Power supply
Ampere - hour
=
rating
Pout
Pin
energy
(Ah)
(故障排除):
(V)
efficiency
Troubleshooting
analysis
planning
measuring
五、
damage
ex
For how many hours can a battery
deliver 2 A if it is rated at 70 Ah?
70 Ab/2 A-35 h
Series Circuit
Series ($)
I相同
V
.
R
=
=
V₁ + V. ...
R₁ +
R₁₂+
• Kirchhoff's Voltage law
↳ Voltage divider :)
Voltage
R
Measurement
:
P = P₁
+
(KVL)
封闭迴路 Voltage 总和为。
Troubleshooting
series
:
open
short
⇒
prevent
current
>>>> cause more current
557
333
Potentiometer as an Adjustable Voltage Divider

ページ5:

六
Parallel :
.
Parallel Circuit
(並)
P = P₁ + P₁₂+
V相同
1
R
=
I. + I. ...
R₁
R₁
@ Kirchhoff's Current law (KCL)
G = G,+G+
流 入 总 I = 流出总I
node 13
I.-1.-1.
↳ Current
12
divider:
Ix = (RE) IL
Troubleshooting
parallel
Rx
:
open
R₂
I₁
=
R₁ + R₂'
两电阻特例
R₁
I₁-
I
R₁ + R₂
Rand 1
I\
分支工 不变
t Series - Parallel circuits
Loaded voltage divider :
10 V
1.0 k
R₁₂
R
1.0 kn
10 V
VOUT
1.0 k
R
VOUT
1.0 kn
(a) Unloaded
R₁₁
Vout = 1
V...
R₁+
(b) Loaded
The effect of a load resistor:
VOUT YOUT
ww
(b) R not significantly greater than R₂
(c) R₂ much greater than Ry
Your VoUT load)
.
Load current / Bleeder current (I)
Loading effect of
Voltmeter
R₁
ww
(b)
R₁
w
ww
R,RM
• if
meter resistance 至少比连接电阻大十倍
=>
loading effect J
SV
Notation for Parallel Resistors
R₁ || R2 || R3 || R4 || Rs
24 V
(1 unloaded: Voxt " ( 4.1 + 10) 5 = 3.40 V m
R₁ll R₁ = 16 b
(4) loaded:
10 k
R₁
12 k
RLL
6.2 k
R
R₁
R₁₂
6.2 kn
100 k
BLEEDER
W
R
100 k
W
.
1-52.22 √

ページ6:

Wheatstone bridge :)
R₁
VOUT
R₂
m
R4
· balanced :
V₁ = V₁
Vout = 0V =>
=
1
V₁ = V₁
measuring
temperature
:
≈
AVOR A Rehern
V
(-
)
4R
Thevenin's theorem :
(數理學文理) 简化电路成串联电路
Thevenin's equivalent valoage (VTH)
AB 1]
open
circuit (no load) V
Thevenin's equivalent
resistant (Rin) - AB同总R(所有換成门电阻)
ww
• step: 负载廾路
Maximum Power Transfer theorem :
thevenizing bridge
circuit
Max
transferred
to
power
load when R₁ = Rs
w
V₁
V₂
V₁
V4
(e) Thevenin equivalent circuit
W
Source
RS
www
=
R
2
R, R. = R.R
(可測未知)
black box
ww
A
RTH
=
m
RL
P = IV₁ = I'R = V
theorem (重整定理):
Superposition
multiple
voltage/
current sources
每个源分开看,再叠加
(a) Problem: Find
Troubleshooting
open
→
022
short
=>
002
(d) Find due to
ww
w
(Find due to g
(
partial open
→>>
much higher
partial short much lower
(R)
do Restore the original sources. Algebraically add an
Past the actal they are in same direction
PmW)

ページ7:

Sine
^\. Alternating Current & Voliage]
wave
(正弦波)
Polarity (#21)
Positive nation
.
Peak value (4 1) : Vp/ Ip
↳ peak.
to
-peak value :
Vpp = 2V₁ / IP
Act
AC之熱能(power)等效于 DC之大小
•
RMS value
(root
mean square effective value)
等效值
->
=
Vrms VP
≈0.707 Vp
V₁
= √ √₁ = 1.414 Vrms
=>
VIP
.
Average value
Vavg - Vp
angular
measurement
≈0.637 Vp
Irad-57.3"
radius
S = r
.
formula:
y =
A sing
.
Phasor (10)
180°
90°
135°℃
225°--
AC circuit :
270°
90° 135°
315
≈ 2.828 Vrms
/I月理
Half-cycle average value
0637
1809
90/2 rad
√ 225° 270° 315° 360°
360°,2 rad
90°
.
phase shift
=V sin
6
0-45
45°
+Voltage (+V)†
current (+1)
Positive maximum
-Voltage (-V)
current (-)
Negative maximum
SA
A leads B by 90°, or B lags A by 90.
.
Ohm's law
.
Power Kirchhoff's law.
⇒>> 換RMS仍适用
(Vrms Irms RP=Iws Vim = IR = V ...)
superimposed DC & AC
Nonsinusoidal
wave
VDC+V₂
VDC
RV + VDC
Voc-V
0
Pulse wave: (脈波)
pulse transit rapidly (leading or rising edge) from baseline to amplitude level, after a period of time,
transit rapidly (trailing or falling edge) back to the baseline level
Time (1)
v = Vp sin e
i = Ip sine

ページ8:

Square
•
ideal pulse
T
Amplitude
Leading (rising) edge
Leading (falling) edge
Trailing (falling) edge
Trailing (rising) edge
Baseline
土
Baseline
Pulse
width
(a) Positive-going pulse
- ideal pulse
non-
D 八
(b) Negative-going pulse
time
interval
→
10%~
90% of Amplitude
• pulse width >
half.
-way
point
repetitive pulse
(periodic)
wave
→
kw
) 100%
(佔空比)
T
dury cycle - 12
K
to to
0.1A-
duty cycle
50%
the
average
value of pulse
wave
Vavg =
baseline +
Sawtooth
wave
· ( duty cycle) ( Amplitude)
(三角/锯齿波)
triangular
⇒>
two
ramps slope 19
|½/2T|T|
Triangular
ramp
(linear)
sawtooth
九、
basic
V (or 7)
Slope
Nonalternating Triangular
Alternating Triangular
=> Two
ramps
duration 不同
V (or /)
Alternating Sawtooth
Slope
(a) Positive ramp
Capacitor ()
(b) Negative ramp
construction :
Dielectric
介視角
how to
store
Conductive plates
charge
insulating material
as the capacitor charger
Connecting leads
After the car charges to Voelectrons fre
deally, the capacitor
charge when
cted from the voltage s
Q
volt
>>
per
C
(Farad = Cul)
✓
Capacitance (电容):
amount
of charge
stored
44 µF (10) PF (10°)
sawtooth (sweep) voltage

ページ9:

how to
store
energy:
以电场儲存
W = IC V² (J)
Lines of force
F =
ko.0.
1 mil = 0.001 inch
Capacitor
Rating
:
voltage rating
(breakdown / working voltage).
不损害设備 Man voltage
⇒ dielectric strength
决定(1)
mil
temperature
coefficient.
+: T/ ⇒ C
: T' ⇒ CA
Leakage:
厶介电质非ideoad
会漏电流 c=
physical characteristics :
.
dielectric constant (relative permittivity)
== (8-85×101)
C =
d
[types
Fixed capacitor
1. Mica
(元)
:
capacitor.
type
2. Ceramic capacitor
=
6.= 真空:6=8.85 × 10-h (F/ml
(a) Full plate areac
(b) Reduced plate area
(a) Plates closer together.
(b) Plates further apart
more capacitance
less capacitance
more capacitance
less capacitance
-
stacked foil · mica
/ silver screened
(a) Stacked layer arrangement
bo Lapers are pressed together
1 pF ~ 2.2 uF
• E1
> 小物理尺寸供大C
3. Electrolytic capacitor
有极性⇒
反会损坏
1 ~ 200000 uF
350 V
(b) Typical radial-lead electrolytics
type
-
Al / Ta
Variable capacitor
•
Ceramic
or
Mica
is
common
dielectric
C changed by plate sparation (PR #RUE)
Capacitor Labeling:
(小型)
有标一 AF(MF、MFD)
有小数 μF
纯数字
三位、无小数
ab x 10°
(c) Symbol for an electrolytic
capacitor.
(0.022
0.047
0.001
MFD
220
(a)
(b)
(c)
(d)
(a)0.022F
(b) 0.047 F
(x)0001
(d) 22 p

ページ10:

Series
capacitors
· / V₁ = V + V, + ... / O
. CV CV+CV+...
=
V-V
=
Parallel capacitors:
Q = Q, Q₂+
+...
../ C.V. = C.V, + CV, +...
capacitor
in
DC circuit
连DC => 充电
Q
1
+
C₁ = C, +C₁₂+
Charging
.
充滿
no current
10
open
Discharging
.
capacitor
blocks constant
DC
c.
2
(a) Uncharged
50 V
C.
C₁ = CICLI
Fewer electrons
More electrons
B
more positive
make plate B
more negative
(b) Charging
OV
(a) Retains charge
(b) Discharging
(c) Uncharged
.0
(c) Fully charged
RC time constant:
.
.
charge 移动需时间
take 57
to
general formula:
=> time interval: time constant 7 = RC
V (final voltage
change
Charging carve with percentages of the final volage
V by 99%
transient
time
Exponential voltage curves
v = V+(Vi-V) e
i = IF (I-IF) e
v = V₁+(0-V₁) e = V (1)
L
charging from
0
L
discharging
to 0
v = 0 + (V₁-0)eth.
V₁.e
final/initial
AC circuit
capacitor
in
瞬时电流
i
Capacitive
1 = C 1/
Reactance ( Xe容抗】
A
Vc lags I 90°
2xfc
(2)
1
Ohm's low : VIX
rate of change
EM
(d) Retains charge
Vinitial voltage
by Discharging curve with percentages of the initial voltage
C = 1

ページ11:

power:
#cycle
部分
儲存
energy
另一部分稈回电源
instantaneous power piv
Ptrus =
0 =
电容不耗 Energy
V
reactive power
电容
store or return
之
rate
-> PIVX₁ ==
(VAR)
Xc
applications:
Filtering - power supplies
DC blocking / AC coupling -
not
pass
DC
Power
line decoupling -
supply
suppress
unwanted voltage spikes due to
Bypassing
Signal filters
# AC voltage it
ww
而不 影响 DC电阻值
select AC signal
Timing
circuit
time
delay
RC
time constant
Checking a capacitor with an analog ohmmeter. This
check shows a good capacitor.
+ RC circuits
Sinusoidal
Response
of
RC circuit
purely R
• phase angle of
V. I
purely C
90°
combination (R+C)
0°~90°间
(Impedance (F2 # ) :)
Z = R+ j Xc (phasor sum)
.
L
magnitude
=
+
Phase angle
Ohm's law
:
0 =
V - IZ
tan
X
R
(n)
90°
fast switching
Sine wave generator
V leads V
Velags V
Fleads
Xc
Xc
(c)
(a)
(b)
www
HH
xc
(a) Z = R
(b) Z=Xc
the
=xc
MMY
Rectifier
xp
M
(c) Z includes both R and Xe

ページ12:

Series RC circuit
I : 经RC相同
/ Vc tk I 90°
Parallel
V : VR 5 I
from KVL → V₁
V₂ +
0 tan
f change
:
RC
circuit:
Xc Z OR EX
R
Increasing f
Xc3
₤3
Z₂
XC2
ㄠˋ
Xev
$2
(a) As frequency is increased. Zdecreases as X decreases.
causing and to increase and decease
.
Z
RX
√R'+ X
tan" (X)
Conductance (G): G =
R
Capacitive susceptance ( 电容性电约,B،);
Admittance (Y) : Y =
=
Z
√G` + B₁"
from KCL →
=
conversion from Parallel to Series
Series - Parallel
RC circuit •
並等效成串 + $
oscilloscope
(示收器):
At
40 = (
1 x 360
T
Power
in
RC :
true PIR
reactive
P = IX
apparent PIZ
VC
Ve
Velags / by 90°.
Ve and I are in phase.
Amplitudes depend on the
particular circuit.
90°
() As frequency is decreased. Z increases as Xe increases
causing/and V to decrease and Ve to increase
Frequency is
By watching these two
meter, you can sec
what is doing: Fi
increasing and Viscos
Thus, Zis decreasing
Kb
By watching these two
met, you can see
what doing
fining and Vis
dc Thes, X
lo
☑
B=
(Siemens)
F
0
tan(+)
R-Z.co
V=
Y=VG+R
=
☑
X-Zsin
Determine (al impedance total current (c) phase angle by which Ihot leads Vs
0-0 purely resistive circuit
purely capacitive circuit
=
Pa coso =
1. V, cos
(W)
(VAR)
13xc
粒
:
--
%%₂ = {√@{ + 8% = √{\]\ <?««£}°² + (3.4[m2]} = 2.09m2
AA1000+
-
(479451)=33
X-(479) 451-339)-12)--
VV-Ve
Watts (W)
P
Voll-ampen
(VA)
P(active)
Volt-amperes
reactive (VAR)
(a) Impedance phases
(VA)
(b) Impedance phasors are multiplied by
to get power
(c) Power triangle

ページ13:

power
factor :
PF = cose
significance of
apparent power:
D
transferred
between
power
source
load
Pa
Ptrus
P
-
做功
#source
load 12]
130 V
600w
667A
this below
Z-180
(Geser operating at in mits with a
revival
Geis in danger of internal damage
dae to excess current, even though the
water indicates that the power is
below the maximum wattage rating
RC
RC
.
.
•
lead circuit
phase shift
Vout
:
circuit
R
√RX
lag circuit
Vout lage V
:
V...
.
Vout =
X
Von leads V.
=
$ =
an' ( 1 )
=>
4 = 90° - tan
tan
R
# It A heat 2 energy
由 RX AB
Perus
P-PP
P₁
Pa
V
Vout =Ve
V (V)
(phase leady
Ve
V
(a) A basic RC lead circuit
(b) Phasor voltage diagram showing
the phase lead between Vi, and Your
RC
:
让特定频率通过
-
across
output
R
lead network
-
output
across C
lag network
(截止频率)–
f₁ = 2x RC
(x = R of 2 f)
Frequency Selectivity of
high-
pass
filter
filter
low-pass
cutoff frequency
When
RC lead network
troubleshooting
Ov
w
You
(a) A hasic RC lag circuit
Vout = V₁
V
Determine the power factor and the true power.
PF 30282
2-+-+-150
==(15)(4258)=1
(phase lead)
(c) Input and output voltage waveforms
VcV
-90-0
(phase lag)
(b) Phasor voltage diagram
showing the phase lag
between Vand V
(phase lag)
(c) Input and output voltage waveforms
RC lag network
Frequency response curve for the high-pa
Frequency response curve for the low-pass filter
Ve?
4141 Vore d
ww
Ov
Open R
10 V
十一、 Inductor
basic inductor :
(电感)
10 V
m
w
Open
Dv
10 V
Ov
ww
100
Ov

ページ14:

Inductance (A) :
A
per
s
through col
induces / V
NuA
=>
L
l
how to
Winding
.
store energy
:
以磁场儲存
W = LI (J)
Resistance/Capacitance
(DC)
Winding Resistance (R.)
:
线本身R
m
(Henry)
00
(a) The wire has resistance distributed
along its length
Length, /-
Cross-sectional area, A
Core material
Number of
turns, N
(b) Equivalent circuit
Winding Capacitance (CW)
导线间彼此靠很近 just
like c
000
Stay pance between each lop
dox
→ 高 f 时 Cw
显著
EM induction :
Faraday's law
-
induced V
B changing
rate
↳ ₤1 =
induced V =
与[变化相反之 induced I
←
I b Amplitude
J
(柳I 变化)
Len's law
巨变化→
induced V
(AA
抵抗原始[变化)
types
Des
m
(a) Fixed
→ induced V 极向产生[抵抗变化
Series capacitors
.
L= L, L₁₂+
Parallel
capacitors
mi
-m
(b) Variable
(a) Air core
(b) Iron core
(c) Ferrite core
.
inductor
|
=
L₁ L
in
+
DC
+...
circuit
constant
I
Rw
=>
=
no induced V
V drop
=>
18 short
P=1²Rw
Conversion of electrical energy
to heat due to winding resistance
Energy stored
in magnetic field
W-L
R

ページ15:

RL
time constant :
·抵抗电流变化⇒不会瞬间变化 ⇒ time
I reaches final value
in 52 (it 63% )
.
general formula:
v =
V+(V-V) e
-¾
i
IF (I-I) e
-*/
constant
7 =
R
L
charging from
0
=>
I₁ + (0-1₁) e = I₁ (1-e)
L
discharging
to D
=>
10+ (I₁-0)e. I₁e
inductor in
AC circuit
V leads I 90°
Inductive Reactance (X感抗):
.
X₁ = 2xfLx
Ohm's
VIX₂
(D. HH)
power
:
* cycle
部分儲存
energy
另 - 部分 釋回电源
instantaneous power piv
Increasing cument in an inductor
Decreasing cument in an induct
true
power
ideally.
0
bt due
to
R... = P=Rw
V
reactive
power
电
EX store or return
2
rate
=>
Pr = IV = IX₁₂
(VAR)
XL
Q =
P₁
Perus
%
=
IR
Rw
Quality Factor :
applications
.
Noise suppression / RF choke / Tuned circuit
十二、RL circuits
Sinusoidal Response of RL
:
circuit
Sine wave generator
purely R
Vlags V
•phase angle
of
V. I
purely L
90°
combination (R+L)
0°~90°间
Ilags V
Power curve
P-V
1+
L-+
1-0
p=0
p=v=0 p=w=0
P=0
V leads V
m
L

ページ16:

Impedance
(阻抗):
Z = R + j X
L
magnitude
Phase angle
(phasor
sum) (2)
: Z = R² + Xi
日
tan (L)
Ohm's law
V - IZ
LOA
(b)
(c)
~
W
m
Series RL circuit :
I : 经RL相同
V :
VR 5 I / V₁ # I 90°
from KVL →
of change
:
↳
→
V₁
+ V₁
0 tan
90°
I lags V2 by 90°
V and I are in phase.
Amplitudes depend on
the particular circuit.
X、Z7 日 ↑ · R 固定
Increasing f
LOL
Parallel
RL
circuit
Z =
RX
√R+X
0 =
tan" (R)
R
X13
X
$2
Xx
"
Conductance (G): G= R
Cal Aquency increase and
Inductive
susceptance (电感性电納:B):
B.
=
Admittance (Y) :
Y =
→ Y
Z
from KCL →
+
0 =
tan
.)
Series - Parallel
RL circuit :
1等效成串+
Power in
RL :
A
R-Zoove
true
Pere IRP cos = I.V, cos
(W)
reactive P = IX
(VAR)
apparent
P₁ = I Z
(VA)
(a)
-☑
W
pieler
Fancy
2
do As frogacy is deced, sad increase and
decreases
V₁
(b)
8
V₁. VR. VL
(Siemens)
a
A
P(apparent)
P, (reactive)
N
By watching he twe
dening Vis
ant, and thesis
By watching he we
1x-1

ページ17:

recall
power
factor
:
↳ significance of
power
factor
PF = cose
D
many
practical loads
本身具
=
为正常运作必需
(ex transformer
moter
speaker)
P.-I. V, cas
@ PF/ =>
1 * load
deliver
power
↳
power
factor correction :
inductive load
12
PF
並联C修正
Mo
resultant
reactive
current
=C
(a) Total current is the resultant of Ig and I
RL
lag circuit
:
Vout leads Vin
RL
V
R
√R+ X
lead circuit
:
=>
-1 x
tan
Jesh
(b) Ic subtracts from I, leaving only a small reactive current, thus decreasing
and the phase angle.
m
L
(phase lag)
VR (V)
(a) A basic RL lag circuit
(b) Phasor voltage diagram
showing phase lag between
V and Vur
(c) Input and output waveforms
w
VL (VO)
Vin
Vin
R
Vou
phase lead
(a) A basic RL lead circuit
8
(b) Phasor voltage diagram
showing V leading Vin
A
(c) Input and output voltage
waveforms
•
Vout lags V
4 = 90° - tan
"(x)
Vin
R
RL as
a
Vaut
Filter:
X₁
V..
low-
-pass
filter
{
output
across
R
fl
=> X 1
=>>
Vout / DC (0 Hz), L
act
as short ⇒
Vout = 0
output
across L
high-pass
cutoff frequency
trouble shooting
Ov
filter
f1 =
=>
Vout // DC (0 Hz), L act
as short
(截止频率)
f. - L
(x₁ = R of 2 f )
36 A
Ov
mon
Open L
Ov
DA
10 V
三
Series RLC
X tozal
RLC circuit
Zoral
==
circuit
=
+
& Resonance
=
tan (
Wental
R
m
OA
R
www
Ov
(a) Before failure
(b) After Lopens
OFA

ページ18:

Series
.
.
X=Xc
Capacitive: Inductive:
Xc
Va
-m
#m
w
m
Xc
0
Series
resonance
27fC
X₁ =27fL
Resonance:
occures
->
when
×₁ = × =>
2π FL - 2xt.C
effect of frequency:
Ine voltage across the series combi-
nation of C and L is always less than
the larger individual voltage across
either C or L
f (resonant frequency)
r
f.
|
21LC
(4) As fequency is increased below resonance from Xe>XFincases from 0, Vic from
V₁V₁
(b) At the resonant frequency, XX
(a) Current
.
impedance
.
phase angle
Zi
IXC
IX
w
Va
in m
Va
m
(b) Resistor voltage
(c) Capacitor voltage
(d) Inductor voltage
(e) Voltage across Cand L combined
90 (lags V)
0°
-90° (I leads V
Inductor voltage and capacitor voit
age effectively subtract because they
are out of phase.
w
XL = XC
Z₁ = R
VR
m
(c) As frequency is increased above resonance: Xc<X, I decreases from V,/R. V decreases from V
Ve decreases from (VRX V docremes from (VRIN, and Veg increases from 0.
XcXL
Capacitive:
leads V
Inductive:
Flags V
(a) Below f. I leads V..
(b) Alf. I is in phase with V.
(c) Above. Flags V.
(d) Phase angle versus frequency
Series Resonant
Filter:
Band Pass Filter :
Bandwidth of Passband:
.
BW
=
f-f
.
lower / upper cutoff frequency
: f. / f₂
(-3 dB / critical band half-power frequencies)
.
half
-power points
=>
P(43)=
I₁R = (0.7071) R = 0.5 PHAR
Decibel (dB) measurement
:
90 As the fini
As the fency in to
As the Imcy incomes from £
Ahe Inquency inces above des

ページ19:

•
dB
= 10
.
dB
Amplitude
= 20
log (Post)
Pin
-)
log (Vous)
Vin
(a) Actual
Passhand
=>
0.707Vx
-3 dB frequency :
20 log
-20 log(0.707)--3 dB
Frequencies between f, and f
are passed through the filter with
amplitudes no less than 70.7% of
maximam
Frequencies outside passband
are reduced to less than 70.7%
of maximam a and a
are considered
to be rejected.
Frequencies from, and
are assumed to be passed
equally. All frequencies
outside the passband are
eliminated.
Compare selectivity curves. The
blue curves the greatest
welectivity
Quality Factor (Q) :
stored
Q =
energy
=
energy
dissipated
Band - Stop Filter
applications
Tuned amplifier
(b) Ideal
Passhand
Pr
PIONE
I'
I'R
Stephand
=
✗L
R
(18) -
放大特定频率
Amplifier
Variable C
十四
Diode
(二极体)
Semiconductor:
semiconductive material
Silicon
Germanium
intrinsic
crystal
(本做/线品
no impurities
BW
=
Q
VV
34
G₁ AE MT/
不稳定
Conduction Electrons & Holes :
to Conduction band (f ) → Valence band (HT #) left electron - hole
• e jumps
• é loses E.
back into
hole →
recombination
↳ electron / hole current
A m
ible and las
ime 2nd hole and
Add
When a les dones bright seeing the he
Conductor / Semiconductor/Insulator :
• 纯 半导 非良导,亦非良绝
Energy
Conduction bund
Conduction band
Vilence band
Energy gap
Valence band
Valence band
Condiction and Overlap
Insulator
(b) Semiconductor
(c) Conductor
~
pair
Energy
Conduction
band
electron?
Energy gap
energy
Hole
Valence
band
a
L
Electron-hole pair

ページ20:

Intrinsic 半导
Doping
add
Extrinsic 半导
impurities
↳ free c
hole ft/
n-type :
+ pentavalent
atoms
(5A)
-type
↳
e(majority carriers)
p-type :
4
Diode :
+ trivalent
o (majority carriers)
o (minority carriers)
atoms (3A)
e (minority carriers)
Depletion region
(耗尽/空乏区):
ions
pn junction 附近 + -
耗尽e o
.
• barrier potential (V3).
—
使穿过电场之ˇ
↳ 25°C Si 0.3 V
/ Ge
→>
0.7 V
L
junction Temp ↑
Biasing
a
diode:
(偏压)
Forward
bias (順偏): 允许 current
Vants source
n-type
+ 5A
P-type -
+ 3A
p region
Depletion region
n region
(a) At the instant of junction formation, free electrons in the
in region near the pu junction begin to diffuse across the
junction and fall into holes near the junction in the p region.
(b) For every electron that diffuses across the junction and
combines with a hole, a positive charge is left in the s region
and a negative charge is created in the p region, forming a
barrier potential. This action continues until the voltage of
the barrier repels further diffusion.
Barrier
pregion +V-region
Depletion
w
VBIAS
才能导通 ⇒克服后,外加V provide
n region
e E a depletion region
对 Si导通发生于约0.7V
, once 顺向导通, 二端V 几乎
在
remain
V2在空区 effect
=>
forward bias
oppose
Reverse
bias (達倫):
阻止 current
VBIAS source
接P
carriers
远离pn junction
空乏区// 初期有
transient Current (瞬态电流,很快消失
最终大 多 I 停止
凵逆偏
空乏区宽,
CV(Depletion - region Capacitance)
.
junction
Temp 1
=>>
反向电流, ( PR J mA ~ nA $2)
Reverse Breakdown :
& # * of occur
①外部逆偏ˇ足夠大
少数
enough E
碰撞 atom
游离
价e 被撞入导带
===> avalanche
effect (雪收左)
=>
反向电流加
@ normal diodes 可能损坏 Zener diode (齐约二极体专为此设计)

ページ21:

Characteristics:
General diode V-I characteristic curve
symbol
Anode (A)-
"
Va (breakdown)
%
Reverse
bias
Metal contacts
and wire leads
1R
Forward
bias
Barrier potential (Vg)
VIAS
VF
VIAS
+
VBLAS
Cathode (K)
(b) Forward bias
(c) Reverse bias
.
ideal
diode
Ideal diode model
VF
IF
IF
1=0
(a) Forward bias
(b) Reverse bias
diode Rectifiers :
(整流)
单向特性。
AC DC voltage
1. Half
- wave rectifier:
Operation during positive alteration of the input voltage
I-BA
Operation dringegative aeration of the input voltage
average
value Vag
Vp
兀
vvv
ww
Ideal diode model
Ideal V-/ characteristic curve
•
effect of barrier potential: Vp cout
=
Vp (in) 0.7 V
•
Peak Inverse Voltage (PIV)
逆偏时diode能承受最大
2. Full
- wave
rectifier:
...
Vin 0
=
2 Vp
兀
Full-wave
0.637 V
Bridge rectifier
Full-wave
Vout 0-
rectifier
During hall-cycle of the input. D, and Dward-hi
During negative half-cycle of the input, D, and D, forward-biased and conduct an
A
PIV
R
center tapped full-wave rectifier
V=Vi

ページ22:

Power Supplies
•m mm mm mmm
Hall-w
Full-wave
rectifier
Load
Capacitor - Input Filter :
Rectifier
0-
Filter
0
(a) Initial charging of capacitor (diode
forward-biased) happens only once when power is turned on.
RL
"
(b) The capacitor discharges through R, after peak of positive alternation when the diode is reverse-biased.
This discharging occurs during the portion of the input voltage indicated by the solid dark blue curve.
.
PIV - 2V
=
• Ripple Voltage
:
(a) Greater ripple means less effective filtering.
(b) Smaller ripple means more effective filtering.
V
r -
) 100%
Vp
L
ripple factor
special purpose
diode :
diode (LED):
C: ½ cycle charge
#discharge
0
Ripple
Same slope (capacitor
discharge rate)
0
(a) Half-wave
Ripple
mmmm
(b) Full-wave
~
heat
ligh
Light
1. light - emitting
导带e
较价带 ○ 高能阶
recombination
Energy
半导体 有大面积暴露
pn junction
let # 7 th Visible
2. Photodiode
Radiated light (mW)
.
(A)
(a) Forward-biased operation
(b) Typical light output versus forward current
感测光→ 电流
h
==
Imadiance,
+++
ww
⇒ electroluminescence (****)

ページ23:

十五 Transistor (电晶体)
DC
operation
of
Bipolar Junction Transistor (BJT) :
.
npn (e-) / pmp (0)
E(emitter,多数载子入) B (base) C (collector)
bipolar 使用二种栽子(0)
C (collector)
Metalized contacts
Oxide
Emitter
(base)
Base
Collector
Substrate
(a) Basic epitaxial planar structure
(b) npw
transistor Biasing :
E (emitter)
Base-Collector
junction
Base-Eminer
junction
BE
junction
-> 順偏
BC junction
↑
B
B
(a) npn
(c) pmp
逆偏
transistor
.
IE
Current:
= IC + IB
↳ BDC :
Voltage :
I₁₁ = PI
(IN
= α DC =
BDC=
I₁ = IC )
LE
transistor
V₁
=
V₁.-I.R.
.
V₁
=
(a) p
w
BC reverse
BE forward-
biased
C
B
E
(b) pnp
(b) pap
BC
biased
ww
BE forward-
C
E
(PC:20~200)
(a) mp
(b) pnp
=>
VE + VBE (VE=0 = √ ₁ = 0·7 V)
Voltage - Divider Bias :
+Vcc
.
RIN = B.RE
-
R₁
BJT Class A Amplifiers
W
R₁
Rc
R₁₂
RE
transistor
full
导通
cycle (360)
A low-
-
power
(<IW)
collector characteristic
curves
:
VaB
www
(a) Circuit
Rc
www
0.7 V
(b) le versus VCE curve for one value of Ig
VCE
Vctimas
Ins
IBA
Ja
182
781
Catego
8-0
(c) Family of le versus VC curves for several values of In
etc.)

ページ24:

I CEO (Ce) → °
Cutoff (open)
BE:逆偏
BC:逆偏
达到VCE (sat)
In ≠ Pae Is (即便I ^, I也不再7)
Saturation (short)
BE:順偏
BC: 順偏
Load Line
operation
Load line
截止、饱和点连线
(在线上工作)
.
Q
- point
DC load line
To base current curve 交点
Ic
Saturation
(saturation)
(Q-point)
(Q-point)
ol V
Signal (AC) operation
BAC
=
I.
I
Signal Voltage Gain.
A₁ = R
Av
L
V₁
V₁
Signal operation
V₁
4-0
Voe
Cutoff
of Amplifier :
I. Re
Rc
=
Ve
I.RE
RE
Rc.
RE
Load line :
on
4 mA
Saturation
0
Cutoff
80 μA
70 μA
60μA
-50 μA
40 μA
30μA
20μA
104A
VCE
VCE
VCE
(Q-point)
24 V
(cutoff)
+Vec
R
Re
Rc
$
I W • W
Voc
R₁
10 k
+24 V
R₂
2.7kf
Re
4702
VCE
RE
220
Bypass Capacitor
Vout = IRc
Common Emitter (CE) Amplifier
-
:
Voltage Gain
Vin = I₂ (r₂+ RE)
increase
j
V₁
Rc
C
o Output
• Bypass Capacitor
Bypass Capacitor Av
25mV
A₁
Vout
1.R.
R₁
Input
Output coupling
capacitor
=
Vin
I. (r.+ R)
r₂+ RE
Input coupling
capacitor
R₂
RE
R₁
C₁
Bypass
capacitor
=
(short RE)
r.
re
x
I.

ページ25:

RC
RC:
series
Summary of Phonor
RC parallel:
V₁
R.L.
RL
series
X
9
N
Z
e
N
P
gs by on
Vand in phase
Ampliades depend
the p
I₁
I total
B₁
☑
Vs VR Vo
RL parallel
8
8
V₁· VR · V₁
I
I total
3
BL
Y

ページ26:

2. Find VA and VED.
1.0 k
ww
B
100 V
1.0 k
ww
R₁
w
102
Rs
www
R₂
D
330元
V₁ => A→ # C
1.0 k
VA
C
1.0k
www
33
R₁₂
WWW
VED
33.2.
1+1
= √₁ ( 17 ) = 100 ( 141 ) = 50√4
VE-V₁ = -50-E25)=-25√A
ww
B
D
)x3 = 1.356
Roy 9.04
my
V
1.356
D
√TH
=
102
16.5
16.5 + 10 + 10
RTH =
16.5×20
=
9.041
165-20
R 33
R RR 42.04|
I 356
0.032
=
R₁ =
I₁ =
Iq
=
√4 =
3
31
33 +10 + 10 = 3
3
=
0.097
0.032
0.032 x33 = 1.056
4241
√40-03233 -1.056
I₁- 0.032
1. Sine wave A has a positive going zero crossing at 30° from a reference. Sine wave B has a positive
going zero crossing at 45° from the same reference. Both have peak values of 15 V. (a) Draw these two
waves. (b) Determine the phase angle between the two signals. (c) Which signal leads? (d) Write the
general expression of these two waves. (e) Find the instantaneous values of both waves at 90°.
(A)
The capacitive reactance is
jóv
R
www
2.2 k
f = 1.5 kHz
(b)
45° -35° = 15.
A: 15 sin (e-)
B
v = 15 sin (8)
(C)
A
C
Determine the current through R, and R, for VAB=6V
R₁₁
www
R₂
3.3kf
2.7 k
R₁
R₁
10 kn
9 B
w
4.7 kf
Rs
4.7kf
(c) A
A
V= sin 0.87
B
V = sin .71
R₁
0.022 uF
Determine the voltage gain of the amplifier in Figure 19 both with and without a
bypass capacitor in normal and in decibel form.
V₁ = (RRR) Vec
R₁
=
(47 +10) 10 = 1.75 √
Vec
+10V
ZATER S
ov
2πfC 2(1.5 kHz)(0.022 uF)
- 4.82 k
z=VR²+ X = √(2.2 km2)² + (4.82 ks)² = 5.30 k
1
1
Xc=
The impedance is
Applying Ohm's law yields
V
Z
10 V
5.30 k
1.89 mA
V₁ = √₂ - 0.7 = 105 V
I₁ = V 1.15 1.05 mA
R
R 10kn
X=
25-V
re=
I₁
25
1.05
23852
A₁₁ =
R₁
+ RE
4.7k
1023.8
-4·58
Ay = 20
20 lg (4-591-13-2483
R₁
r
A₁ = 11-m
197
Ay = 20
23.8&
20by (197)-45-928

ページ27:

Generator :
AC 有刷:
集電環
定子
轉子
電刷
DC 有刷:
换向器