Czochralski method (チョクラルスキー法) is af人st growth method and
widely used for both semiconductors and oxide/fhuoride materials for opi
applications. It also normally produces the most nearly perfect and homogei
erystals. (略) Normally a crucible material is needed that i5 compatible wih
melt (意味 : 浴融物), however, he most common crucible material used fo
that is, sihica。 dissolves slowly in the melt and this raises certain process
the growth of this material. Costs for Czochralski method are higher than
other techniques, but it is used when the greatest perfection of grown
required. (原文を一部変更しました.)
P Capper. Bu Csia/ Grow7か: 4e/Dos ag/
