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英語 高校生

本文2行目のin~を~のでに訳している理由を知りたいです。

第3文: to dey。。 DD (OftentimeS) he is not wiling to his parentS Im his gre 。 age に(even to himselt) ( js the young person may r。。 adrmit > selt) (that he im Y rese 5 s do 0 (about taking on adult Tesponsibilii oubts and fear 3 < jim. Oftentimes he i。 S mo nd freedor) Jaced upon ny resfrictionS P GSり/75す3 1 NO himself that he has doubt。 。 搬入を〔 すとadmit nat 、 6 willing to drm1b 3n, 第4 文! 0 on adnult responsibilities and freed。 Dm hat hiS DarentS are OVer dnxic Dus 2 aking fears about taking The adolescent may say ay say 6 escent may S9y た 。t his Darents are 、 Id Yer_anxious and Over The adol and over: protective W here: y into them. Ss though not aware of i a of it he protecive hereas (, though not aware ct⑯ projecting his own amxiety ansdety into them を表す接続詞ですが, 接 ので though は挿入と he # hereas は対 projectimg is own anxiet 日本大 3 の直後にコン< 所して,( )で< 分に対する主節部分は he is them にあたりま 。thon It is not uncomrmon je is が省略 (接続詞直後の SLbe は人可能 = 大 切是48) (for strained relationships (for … はto 不定詞の主語) | 3 ご こでの it は,修飾部分内の it は主節全体を指示 1 指示すること (t6 develop between an adolescent and his parents) ) = p ト he is て them. を指していることになりま3 着者と両親の間で皿張関係が高まることは特別なことで8 地位を得ることを非常に強く切望しているので,若者は自分 らゆる制約をいやに思うのである。自分が大人の黄任と自由 ととに対して疑念や恐れを抱いていることは,自分に対して らないことが多い。親は心配症で過保護だと若者はいうか: 方では意識はしていないのだが自分自身の不安を親に* のである。 (Im his great eagerness to achieve adult status.) the young person may resent any re ction (placed upon him) 前置詞から始まる文なので, 前置記句を ( ) でくくりだし, 過去分記 ) をつけでお した。 !孤ykeos s | ! 1 本番チェ が問わ TS 64gerneSSs fO ^_ +多詞 SSS to (great は名詞 eagerness を修節) 1. though のあとに省略された 2 語を補え。 う he 2. itは本文中のどの部分をきすか。きheis-せ

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化学 高校生

RHEED法の原理と得られる7つの情報が、この英文に書かれているみたいなのですが、よく分かりません。 分かる方助けてください!🙇‍♂️

INTRODUCTION Reection high-energy electron diHiraction (RHEED) uses a Rnely collimated electron beam with energy of 10-100 keV. The beam irradiates a sample surface with gazing incidence to obtain forward scattered difraction patterms. RHEED enables us to analyze structures of crystal surfaces at atomic levels and also to in situ monitor growth processes of thin films (mo、1988: Ichimiya and Cohen、2004: Peng et al.. 2011). From the arrangement。intensity and profile of the dilraction spots in RHEED patterns as described below in detail、 one can obtain various kinds of information: (1) the periodicity (unit cells) in atomic arrangements. (2) flat- ness of surfaces. (3) sizes of grains/domains of surface structures and microcrystals grown on the surface. (3) epitaxial relation between the grown flms/islands with respect to the substrate. (5) parameters character- izing structural phase transitions. (6) individual atomic positions in the unit cells. and (7) growth styles of thin films and numbers of atomic layers grown. The most important advantages of the method are that it is quite easy to install the RHEED apparatus in Yarious types of vacuum chambers without interfering with other components of apparatuses and to do real- time monitoring during thin-Rlm growths. Because of these advantages.RHEED is nowwidelyusednotonlyin research Iabs of surfaces and thin fims. but also in device production processes in industry Low-energy electron diiraction (LEED、see article Low-ENNERcy ErecroN DirscmoN)。 in which an electron beam of 10-100 eV in energy is irradiated onto a sample surface with nearly normal incidence to obtain back- scattered difraction patterns. is also widely used to analyze the atomic structures of crystal surfaces. Since one has to make the sample face directly to the LEED

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